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A. De Saja, J
[MitwirkendeR];
Abdullaev, E. G
[MitwirkendeR];
Afanasev, A. M
[MitwirkendeR];
Aleksandrov, P. A
[MitwirkendeR];
Asahi, H
[MitwirkendeR];
Assenov, R
[MitwirkendeR];
Babulanam, S. M
[MitwirkendeR];
Bagraev, N. T
[MitwirkendeR];
Bahgat, A. A
[MitwirkendeR];
Benedix, M
[MitwirkendeR];
Bergner, H
[MitwirkendeR];
Blythe, H. J
[MitwirkendeR];
Bochniak, W
[MitwirkendeR];
Bostanjoglo
[MitwirkendeR];
Botros, K. Z
[MitwirkendeR];
Braun, R
[MitwirkendeR];
Bruynseraede, Y
[MitwirkendeR];
Bryant, F. J
[MitwirkendeR];
Brückner, V
[MitwirkendeR];
Camerlenghi, E
[MitwirkendeR];
Castaing, J
[MitwirkendeR];
Chakrabarty, D. K
[MitwirkendeR];
Cong Qui, Le
[MitwirkendeR];
Couderc, J. J
[MitwirkendeR];
[...]
Physica status solidi
- [Reprint 2021]
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- Medientyp: E-Book
- Titel: Physica status solidi : Volume 90, Number 2: August 16
- Beteiligte: Bostanjoglo [MitwirkendeR]; Görlich [HerausgeberIn]; A. De Saja, J [MitwirkendeR]; Abdullaev, E. G [MitwirkendeR]; Afanasev, A. M [MitwirkendeR]; Aleksandrov, P. A [MitwirkendeR]; Asahi, H [MitwirkendeR]; Assenov, R [MitwirkendeR]; Babulanam, S. M [MitwirkendeR]; Bagraev, N. T [MitwirkendeR]; Bahgat, A. A [MitwirkendeR]; Benedix, M [MitwirkendeR]; Bergner, H [MitwirkendeR]; Blythe, H. J [MitwirkendeR]; Bochniak, W [MitwirkendeR]; Botros, K. Z [MitwirkendeR]; Braun, R [MitwirkendeR]; Bruynseraede, Y [MitwirkendeR]; Bryant, F. J [MitwirkendeR]; Brückner, V [MitwirkendeR]; Camerlenghi, E [MitwirkendeR]; Castaing, J [MitwirkendeR]; Chakrabarty, D. K [MitwirkendeR]; Cong Qui, Le [MitwirkendeR]; Couderc, J. J [MitwirkendeR]; De Schutter, F [MitwirkendeR]; Demanet, C. M [MitwirkendeR]; Dolgarev, A. P [MitwirkendeR]; Dollingher, L [MitwirkendeR]; Dorikens, M [MitwirkendeR]; Dorikens-Vanpraet, L [MitwirkendeR]; Dudouit, I [MitwirkendeR]; Dybiec, H [MitwirkendeR]; Eftaxias, K [MitwirkendeR]; Emtsev, V. V [MitwirkendeR]; Endruschat, E [MitwirkendeR]; Esin, V. O [MitwirkendeR]; Feller-Kniepmeier, M [MitwirkendeR]; Fernengel, W [MitwirkendeR]; Fitting, H.-J [MitwirkendeR]; Gaber, M [MitwirkendeR]; García, S [MitwirkendeR]; Gaworzewski, P [MitwirkendeR]; Gelsdorf, F [MitwirkendeR]; Ghiordănescu, V [MitwirkendeR]; Gierak, Z [MitwirkendeR]; Gilabert, A [MitwirkendeR]; Gleitz, A [MitwirkendeR]; Govor, G. A [MitwirkendeR]; Gremenok, V. F [MitwirkendeR]; Grilli, E [MitwirkendeR]; Guseinov, G. D [MitwirkendeR]; Guzzi, M [MitwirkendeR]; Hariri, A. K [MitwirkendeR]; Hegenbarth, E [MitwirkendeR]; Helberg, H. W [MitwirkendeR]; Hennig-Michaeli, Ch [MitwirkendeR]; Hild, E [MitwirkendeR]; Hoyer, W [MitwirkendeR]; Hässner, A [MitwirkendeR]; Häszler, R [MitwirkendeR]; Imamov, R. M [MitwirkendeR]; Imhoff, D [MitwirkendeR]; Ismailzade, I. H [MitwirkendeR]; Jha, M. K [MitwirkendeR]; Jimenez, J [MitwirkendeR]; Jäckel, M [MitwirkendeR]; Karoza, A. G [MitwirkendeR]; Kassem, E. M [MitwirkendeR]; Katsnelson, E. Z [MitwirkendeR]; Kaufmann, Ch [MitwirkendeR]; Kazakov, V. G [MitwirkendeR]; Kerstan, F [MitwirkendeR]; Kessler, A [MitwirkendeR]; Kindyak, V. V [MitwirkendeR]; Klugmann, E [MitwirkendeR]; Koren, N. N [MitwirkendeR]; Korychev, D. V [MitwirkendeR]; Krause, M [MitwirkendeR]; Kronmüller, H [MitwirkendeR]; Kulyuk, L. L [MitwirkendeR]; Lachowicz, H. K [MitwirkendeR]; Lazaridou, M [MitwirkendeR]; Lebedev, A. A [MitwirkendeR]; Levade, C [MitwirkendeR]; Lippmann, H [MitwirkendeR]; Löffler, H [MitwirkendeR]; Löschke, K [MitwirkendeR]; Madhava, M. S [MitwirkendeR]; Mahmoud, S [MitwirkendeR]; Malsagov, A. U [MitwirkendeR]; Malyutin, V. I [MitwirkendeR]; Marais, M. A [MitwirkendeR]; Marcinkowski, M. J [MitwirkendeR]; Mashovets, T. V [MitwirkendeR]; Maslov, A. V [MitwirkendeR]; Matiev, A. Kh [MitwirkendeR]; Matz, W [MitwirkendeR]; Mayer, J [MitwirkendeR]; Melzer, I [MitwirkendeR]; Michalk, C [MitwirkendeR]; Milczarek, J. J [MitwirkendeR]; Moldovanova, M [MitwirkendeR]; Moroń, J. W [MitwirkendeR]; Mrsagatov, S. A [MitwirkendeR]; Mukhamedzhanov, E. Kh [MitwirkendeR]; Murthy, S. R [MitwirkendeR]; Müller, H [MitwirkendeR]; Nagai, H [MitwirkendeR]; Namazov, A. D [MitwirkendeR]; Neumann, H [MitwirkendeR]; Nojima, S [MitwirkendeR]; Northwood, D. O [MitwirkendeR]; Oishi, M [MitwirkendeR]; Opanowicz, A [MitwirkendeR]; Osvald, J [MitwirkendeR]; Pagnia, H [MitwirkendeR]; Pashaev, E. M [MitwirkendeR]; Pawełek, A [MitwirkendeR]; Pellissier, B [MitwirkendeR]; Pio, F [MitwirkendeR]; Polovinkina, V. I [MitwirkendeR]; Potseluiko, A. A [MitwirkendeR]; Pynko, V. G [MitwirkendeR]; Qi-Guang, Luo [MitwirkendeR]; Radautsan, S. I [MitwirkendeR]; Rao, K. S [MitwirkendeR]; Rao, T. S [MitwirkendeR]; Rapp, M [MitwirkendeR]; Rasek, J [MitwirkendeR]; Razik, N. A [MitwirkendeR]; Reynaud, F [MitwirkendeR]; Rong-Yao, Wang [MitwirkendeR]; Sabirov, K [MitwirkendeR]; Sadykhov, R. Z [MitwirkendeR]; Samedov, O. A [MitwirkendeR]; Satyanarayana, Ch [MitwirkendeR]; Scheibner, W [MitwirkendeR]; Schmalz, K [MitwirkendeR]; Scott, C. G [MitwirkendeR]; Segers, D [MitwirkendeR]; Sen, K [MitwirkendeR]; Shaisha, E. E [MitwirkendeR]; Sheinin, S. S [MitwirkendeR]; Smith, I. O [MitwirkendeR]; Somashekar, R [MitwirkendeR]; Sotnik, N [MitwirkendeR]; Stauss, H [MitwirkendeR]; Stephan, M [MitwirkendeR]; Strumban, E. E [MitwirkendeR]; Strydom, H. J [MitwirkendeR]; Stryjewski, W [MitwirkendeR]; Sunandana, C. S [MitwirkendeR]; Suwalski, J [MitwirkendeR]; Suárez, N [MitwirkendeR]; Szymczak, H [MitwirkendeR]; Sánchez, J. L [MitwirkendeR]; Słupkowski, T [MitwirkendeR]; Tarabaev, L. P [MitwirkendeR]; Tornow, W [MitwirkendeR]; Torres, A [MitwirkendeR]; Tsumbu, Mbungu- [MitwirkendeR]; Turilli, G [MitwirkendeR]; Tyagi, B. P [MitwirkendeR]; Umarov, S. Kh [MitwirkendeR]; Unnikrishnan, S [MitwirkendeR]; Urban, K [MitwirkendeR]; Urwank, P [MitwirkendeR]; Valiev, L. M [MitwirkendeR]; Van den Bosch, A [MitwirkendeR]; Vanderwalker, D. M [MitwirkendeR]; Vasilev, B. V [MitwirkendeR]; Vega, B [MitwirkendeR]; Vitovskii, N. A [MitwirkendeR]; Vlasenko, L. S [MitwirkendeR]; Walz, F [MitwirkendeR]; Wendrock, G [MitwirkendeR]; Wieser, E [MitwirkendeR]; Willis, A. J [MitwirkendeR]; Wobst, M [MitwirkendeR]; Xiao, Zhang [MitwirkendeR]; Xiojie, Zhang [MitwirkendeR]; Yuraev, N. D [MitwirkendeR]; Zhiheng, Lu [MitwirkendeR]; Zych, W [MitwirkendeR]
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Erschienen:
Berlin; Boston: De Gruyter, [2022]
[Online-Ausgabe]
- Erschienen in: Physica status solidi ; Volume 90, Number 2 ; A
- Ausgabe: Reprint 2021
- Umfang: 1 Online-Ressource (504 p)
- Sprache: Englisch
- DOI: 10.1515/9783112494806
- ISBN: 9783112494806
- Identifikator:
- Schlagwörter: SCIENCE / General
- Art der Reproduktion: [Online-Ausgabe]
- Entstehung:
-
Anmerkungen:
In English
Mode of access: Internet via World Wide Web
- Beschreibung: Frontmatter -- Contents -- Original Pap -- Structure -- X-Ray Topography of Thin Subsurface Layers -- A Generalized Criterion for the Transition from the Layer to the Continuous Mechanism of Crystal Growth -- Application of X-Ray Photoelectron Energy Analysis to Depth-Selective Studies of the Subsurface-Layer Structure -- Influence of Permanent Electric Fields on the Successive Phase Transitions in the Solid Solutions of the System (Pb 1-x Bax) ZrO3 -- Mesomorphic Behaviour of Mixtures of Cetyl Alcohol and Dimethyl Sulfoxide -- Kinetics of Laser-Induced Liquid Metal Etching of a-Si Films -- Formation of MoSi2 by Light Pulse Irradiation -- Observation of Ni8Mo Ordered Phase in Ni-Mo Alloys -- Relation between the Pair Potentials VAA and VBB in Classical Statistical Physics of the Order-Disorder Transitions in Binary Substitutional Alloys -- Two-Step Ageing Treatments as a Means to Estimate the Zinc Content of Guinier-Preston Zones at Elevated Temperatures in an Al-15 at% Zn Alloy -- Investigation of the Structure of Molten Ge15Te85 in Dependence on Temperature -- Defects atomistic aspects -- On the Applicability of Conventional Contrast Theory to Weak Beam Images of Stacking Faults -- Phenomena of Structural Defect Recovery in Molybdenum -- The Spatial Distribution of Frenkel Pair Components Created in Germanium and Silicon under Irradiation -- Mobile Dislocation Density Variation during Strain Rate Change Evidenced by Acoustic Emission -- Study of an Experimental Technique for High-Temperature Deformation of Compound Semiconductors (Liquid Encapsulation) -- The Dependence of Li Phase Nucleation on the Structure of Partial Dislocations in Silicon -- Diffusion of Chromium in α-Iron -- Work-Hardening Rates during the Steady-State Creep of Aluminum and Alloys Determined from Stress-Change Tests -- Phase-Contrast Microscopy in Comparison with Other Light-Microscopic Methods for Direct Observation of Dislocation Lines in Single Crystals -- The Interaction between Slip and Twinning Systems in Natural Sphalerite Experimentally Deformed -- Positron Annihilation and Magnetic Susceptibility Measurements on Annealed Fast-Neutron Irradiated Crystalline Quartz -- Gold Solid Solution Decay in Silicon -- Strengthening of Alloys by Atomic Order -- Magnetism -- Magnetostriction of Ni-Zn and Co-Zn Ferrites -- The Coercive Field of the Partially Crystallized Amorphous Alloy Fe40Ni40P14B6 -- The Influence of Neutron Irradiation on the Magnetic Relaxation Spectrum of Commercial Non-Oriented Iron-Silicon Steel -- Magnetic Properties of Superconducting Oxygen-Doped Vanadium Foils -- Low-Temperature Mössbauer Measurement of a Polymeric Oxalate (2,2'-Bipyridine) Iron Compound -- Magnetic and Thermal Behaviour of the Amorphous Ferromagnet Fe79B16Si5 -- Extended electronic states and transitions -- Maximum Depth of Characteristic X-Ray Generation -- Simple Model for Thermoluminescence in Conductive Semiconductors -- ESR and Other Properties of Copper-Substituted Tellurium Vanadate Glasses -- On the Radiative Recombination in ZnIn2S4 -- Electric transport -- Effect of Pressure on Electrical Conductivity of TlInSe2 Single Crystals -- Electrical Properties of Polycrystalline Silicon in the Dark and under Illumination -- Bulk Conductivity, Polarization, and Thermally Stimulated Currents of Insulated Polar Crystals -- Electrical Conductivity of Polyester Polymer Containing Carbon Black -- Peculiarities in the Temperature Dependence of the Hall Coefficient in Tin Telluride -- On the Influence of Heating Rate in the Dipolar Relaxation of Ce2(SO4)3 9H2O Single Crystals -- AC and DC Superimposed AC Conduction in Sodium Fluoride Thin Films -- A Formulation for the Critical Temperature Tc of Ll2-Type Superconductors -- Device-related phenomena -- Influence oi Organic Molecules on the Current-Voltage Characteristic of Planar MIM Diodes -- The Use of Ion Implantation in the Fabrication of Cu2S-CdS Thin Film Solar Cells -- Short Notes -- On the Crystal Structure of Thin CdS Films Grown by Pulse Laser Evaporation -- precise Lattice Constant Determination of Hexagonal, Rhombohedral, and Tetragonal Crystals from X-Ray Powder Diffractometric Data -- Transitional Epitaxial Layers in Nickel Films Deposited in Vacuum on Complex LiF/NaCl Substrates -- An Ion Microprobe Mass Analysis of Indium Contacts on Mercury Cadmium Telluride -- Thermal Conductivity of LiKSO4 at Low Temperatures -- On the Filler Induced Modification of the Glass Transition Temperature and Hardness of an Epoxy Resin Composite Material -- Elastic Constants of the (RE)2Fe14B Tetragonal Compound (RE = Y, Nd, and Pr) -- On a Connection between Vacancy Formation Parameters and Melting Process in Rare Gas Solids -- Oxygen Donor Formation and Oxygen Precipitation in Czochralski Silicon Due to Heat Treatment at 600 to 800 °C -- The Observation on Atom Displacements of Silicon Highly Doped by Arsenic during Post-Annealing -- On the Mechanism of Domain Wall Break-Through from Localized Obstacles in Thin Magnetic Films -- Magnetic Properties of Fe80-xTMxB20 and Fe80-xMnxSi12B8 Amorphous Alloys -- Cd2-W - a New Material for Permanent Magnets? -- Preparation and Properties of Barium Substituted Gadolinium Cobaltite -- Peculiarities of Photomagnetization and Magnetoelectric Interactions in Ferrites -- Peculiarities of the First-Order Phase Transition in MnAs -- Magnetic Susceptibility and the Hall Effect in the FeCr2-xInxS4 (0≤x≤1) System -- Deduction of Semiconductor Parameters from the Frequency Dependence of Free Carrier Reflectivity -- Some Observations on the Absorption of Copper in Photochromic Glass -- Picosecond Spectroscopy and Photoconductivity of n-InP -- Microwave Conductivity of Dislocations in Deformed Silicon Single Crystals -- An Interfacial Property of the InGaAs/Semi-Insulating InP Structure Prepared by Metal Organic Vapor Phase Epitaxy -- Investigation of Illuminance-Voltage Characteristics for Thin-Film p-CdTe—n-CdTe—n-CdS Structures -- Influence of Electron Lithography on Electrical Parameters of MOS Structures -- Pre-Printed Titles
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