Media type: Book; Thesis Title: Electrical characterisation of ferroelectric field effect transistors based on ferroelectric HfO2 thin films Contributor: Yurchuk, Ekaterina [VerfasserIn] Corporation: Technische Universität Dresden imprint: Berlin: Logos Verlag, 2015 Published in: NaMLab gGmbH: Research at NaMLab ; 4 Extent: X, 170 Seiten; Illustrationen, Diagramme; 21 cm Language: English; German ISBN: 3832540032; 9783832540036 RVK notation: ZN 4870 : Feldeffekt-Bauelemente allgemein; Feldeffekt-Transistoren ZN 3430 : Ferroelektrische Werkstoffe; Piezoelektrika Keywords: Nichtflüchtiger Speicher > Ferroelektrischer Transistor > Hafniumdioxid > Dünne Schicht > Silicium > Dotierung Origination: University thesis: Dissertation, Technische Universität Dresden, 2015 Footnote: Kurzzusammenfassung auf Deutsch
Departmental Library DrePunct – open access area Shelf-mark: ZN 4870 Y95 Item ID: 34118675 Status: Loanable
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