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Regul, J. [Author]; Keyser, U.F. [Author]; Paesler, M. [Author]; Hohls, Frank [Author]; Zeitler, U. [Author]; Haug, Rolf J. [Author]; Malavé, A. [Author]; Oesterschulze, E. [Author]; Reuter, D. [Author]; Wieck, A.D. [Author]

Fabrication of quantum point contacts by engraving GaAs/AlGaAs heterostructures with a diamond tip - [published Version]

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  • Media type: Text; E-Article
  • Title: Fabrication of quantum point contacts by engraving GaAs/AlGaAs heterostructures with a diamond tip
  • Contributor: Regul, J. [Author]; Keyser, U.F. [Author]; Paesler, M. [Author]; Hohls, Frank [Author]; Zeitler, U. [Author]; Haug, Rolf J. [Author]; Malavé, A. [Author]; Oesterschulze, E. [Author]; Reuter, D. [Author]; Wieck, A.D. [Author]
  • Published: College Park, MD : American Institute of Physics, 2002
  • Published in: Applied Physics Letters 81 (2002), Nr. 11
  • Issue: published Version
  • Language: English
  • DOI: https://doi.org/10.15488/2829; https://doi.org/10.1063/1.1506417
  • Keywords: Orders of magnitude ; GaAs/AlGaAs heterostructures ; Silicon tips ; Processing Time ; Crystals ; Point contacts ; Atomic force microscopes ; High quality ; Quantum point contact ; Atomic force microscopy ; Electronic transport measurements ; Diamond tip ; Defect-free ; Etching ; Quantum chemistry ; Diamonds
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  • Description: We use the all-diamond tip of an atomic force microscope for the direct engraving of high-quality quantum point contacts in GaAs/AlGaAs heterostructures. The processing time is shortened by two orders of magnitude compared to standard silicon tips. Together with a reduction of the line width to below 90 nm, the depletion length of insulating lines is reduced by a factor of two with the diamond probes. The such fabricated defect-free ballistic constrictions show well-resolved conductance plateaus and the 0.7 anomaly in electronic transport measurements. © 2002 American Institute of Physics.
  • Access State: Open Access