Fabrication of quantum point contacts by engraving GaAs/AlGaAs heterostructures with a diamond tip

Medientyp: Sonstige Veröffentlichung; E-Artikel

Titel: Fabrication of quantum point contacts by engraving GaAs/AlGaAs heterostructures with a diamond tip

Beteiligte: Regul, J. [Verfasser:in]; Keyser, U.F. [Verfasser:in]; Paesler, M. [Verfasser:in]; Hohls, Frank [Verfasser:in]; Zeitler, U. [Verfasser:in]; Haug, Rolf J. [Verfasser:in]; Malavé, A. [Verfasser:in]; Oesterschulze, E. [Verfasser:in]; Reuter, D. [Verfasser:in]; Wieck, A.D. [Verfasser:in]

Erschienen: College Park, MD : American Institute of Physics, 2002

Ausgabe: published Version

Sprache: Englisch

DOI: https://doi.org/10.15488/2829; https://doi.org/10.1063/1.1506417

Schlagwörter: Orders of magnitude ; GaAs/AlGaAs heterostructures ; Silicon tips ; Processing Time ; Crystals ; Point contacts ; Atomic force microscopes ; High quality ; Quantum point contact ; Atomic force microscopy ; Electronic transport measurements ; Diamond tip ; Defect-free ; Etching ; Quantum chemistry ; Diamonds

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Beschreibung: We use the all-diamond tip of an atomic force microscope for the direct engraving of high-quality quantum point contacts in GaAs/AlGaAs heterostructures. The processing time is shortened by two orders of magnitude compared to standard silicon tips. Together with a reduction of the line width to below 90 nm, the depletion length of insulating lines is reduced by a factor of two with the diamond probes. The such fabricated defect-free ballistic constrictions show well-resolved conductance plateaus and the 0.7 anomaly in electronic transport measurements. © 2002 American Institute of Physics.

Zugangsstatus: Freier Zugang

Fabrication of quantum point contacts by engraving GaAs/AlGaAs heterostructures with a diamond tip - [published Version]

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