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Media type:
E-Article
Title:
Scanning transmission electron microscopy strain measurement from millisecond frames of a direct electron charge coupled device
Contributor:
Müller-Caspary, Knut
[Author];
Ryll, Henning
[Author];
Ordavo, Ivan
[Author];
Ihle, Sebastian
[Author];
Str¨uder, Lothar
[Author];
Volz, Kerstin
[Author];
Zweck, Josef
[Author];
Soltau, Heike
[Author];
Rosenauer, Andreas
[Author]
imprint:
American Inst. of Physics, 2012
Published in:Applied physics letters 101, 212110 (2012). doi:10.1063/1.4767655
Language:
English
DOI:
https://doi.org/10.1063/1.4767655
ISSN:
0003-6951
Origination:
Footnote:
Diese Datenquelle enthält auch Bestandsnachweise, die nicht zu einem Volltext führen.
Description:
A high-speed direct electron detection system is introduced to the field of transmission electron microscopy and applied to strain measurements in semiconductor nanostructures. In particular, a focused electron probe with a diameter of 0.5 nm was scanned over a fourfold quantum layer stack with alternating compressive and tensile strain and diffracted discs have been recorded on a scintillator-free direct electron detector with a frame time of 1 ms. We show that the applied algorithms can accurately detect Bragg beam positions despite a significant point spread each 300 kV electron causes during detection on the scintillator-free camera. For millisecond exposures, we find that strain can be measured with a precision of 1.3 × 10−3, enabling, e.g., strain mapping in a 100×100 nm2 region with 0.5 nm resolution in 40 s. .