Scanning transmission electron microscopy strain measurement from millisecond frames of a direct electron charge coupled device

Medientyp: E-Artikel

Titel: Scanning transmission electron microscopy strain measurement from millisecond frames of a direct electron charge coupled device

Beteiligte: Müller-Caspary, Knut [Verfasser:in]; Ryll, Henning [Verfasser:in]; Ordavo, Ivan [Verfasser:in]; Ihle, Sebastian [Verfasser:in]; Str¨uder, Lothar [Verfasser:in]; Volz, Kerstin [Verfasser:in]; Zweck, Josef [Verfasser:in]; Soltau, Heike [Verfasser:in]; Rosenauer, Andreas [Verfasser:in]

Erschienen: American Inst. of Physics, 2012

Sprache: Englisch

DOI: https://doi.org/10.1063/1.4767655

ISSN: 0003-6951

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Beschreibung: A high-speed direct electron detection system is introduced to the field of transmission electron microscopy and applied to strain measurements in semiconductor nanostructures. In particular, a focused electron probe with a diameter of 0.5 nm was scanned over a fourfold quantum layer stack with alternating compressive and tensile strain and diffracted discs have been recorded on a scintillator-free direct electron detector with a frame time of 1 ms. We show that the applied algorithms can accurately detect Bragg beam positions despite a significant point spread each 300 kV electron causes during detection on the scintillator-free camera. For millisecond exposures, we find that strain can be measured with a precision of 1.3 × 10−3, enabling, e.g., strain mapping in a 100×100 nm2 region with 0.5 nm resolution in 40 s. .

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