> Details

Auret, F.D. [Author]; Meyer, W.E. [Author]; Janse van Rensburg, P.J. [Author]; Hayes, M. [Author]; Nel, J.M. [Author]; von Wenckstern, Holger [Author]; Hochmuth, Holger [Author]; Biehne, G. [Author]; Lorenz, Michael [Author]; Grundmann, Marius [Author]

Electronic properties of shallow level defects in ZnO grown by pulsed laser deposition

Reference
management

Bookmarks

Remove from
bookmarks

Share this on Whatsapp

Close

Bookmarks



You can manage bookmarks using lists, please log in to your user account for this.
  • Media type: E-Article
  • Title: Electronic properties of shallow level defects in ZnO grown by pulsed laser deposition
  • Contributor: Auret, F.D. [Author]; Meyer, W.E. [Author]; Janse van Rensburg, P.J. [Author]; Hayes, M. [Author]; Nel, J.M. [Author]; von Wenckstern, Holger [Author]; Hochmuth, Holger [Author]; Biehne, G. [Author]; Lorenz, Michael [Author]; Grundmann, Marius [Author]
  • Published: Bristol: IOP Publishing, [2022]
  • Published in: Journal of Physics ; 100, (2008)
  • Language: English
  • Keywords: ZnO ; pulsed laser deposition ; shallow level defects
  • Origination:
  • Footnote:
  • Description: We have used deep level transient spectroscopy (DLTS) to characterise four defectswith shallow levels in ZnO grown by pulsed laser deposition (PLD). These defects all haveDLTS peaks below 100 K. From DLTS measurements and Arrhenius plots we have calculatedthe energy levels of these defects as 31 meV, 64 meV, 100 meV and 140 meV, respectively,below the conduction band. The 100 meV defect displayed metastable behaviour: Annealingunder reverse bias at temperatures of above 130 K introduced it while annealing under zerobias above 110 K removed it. The 64 meV and 140 meV defects exhibited a strong electricfield assisted emission, indicating that they may be donors.
  • Access State: Open Access
  • Rights information: In Copyright