Electronic properties of shallow level defects in ZnO grown by pulsed laser deposition

Medientyp: E-Artikel

Titel: Electronic properties of shallow level defects in ZnO grown by pulsed laser deposition

Beteiligte: Auret, F.D. [Verfasser:in]; Meyer, W.E. [Verfasser:in]; Janse van Rensburg, P.J. [Verfasser:in]; Hayes, M. [Verfasser:in]; Nel, J.M. [Verfasser:in]; von Wenckstern, Holger [Verfasser:in]; Hochmuth, Holger [Verfasser:in]; Biehne, G. [Verfasser:in]; Lorenz, Michael [Verfasser:in]; Grundmann, Marius [Verfasser:in]

Erschienen: Bristol: IOP Publishing, [2022]

Sprache: Englisch

Schlagwörter: ZnO ; pulsed laser deposition ; shallow level defects

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Beschreibung: We have used deep level transient spectroscopy (DLTS) to characterise four defectswith shallow levels in ZnO grown by pulsed laser deposition (PLD). These defects all haveDLTS peaks below 100 K. From DLTS measurements and Arrhenius plots we have calculatedthe energy levels of these defects as 31 meV, 64 meV, 100 meV and 140 meV, respectively,below the conduction band. The 100 meV defect displayed metastable behaviour: Annealingunder reverse bias at temperatures of above 130 K introduced it while annealing under zerobias above 110 K removed it. The 64 meV and 140 meV defects exhibited a strong electricfield assisted emission, indicating that they may be donors.

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