Media type: E-Article Title: A wideband GaN HEMT power amplifier based on the dual‐fed distributed structure for WiMAX applications Contributor: Lee, Yong‐Sub; Lee, Mun‐Woo; Jeong, Yoon‐Ha imprint: Wiley, 2009 Published in: Microwave and Optical Technology Letters Language: English DOI: 10.1002/mop.24090 ISSN: 0895-2477; 1098-2760 Keywords: Electrical and Electronic Engineering ; Condensed Matter Physics ; Atomic and Molecular Physics, and Optics ; Electronic, Optical and Magnetic Materials Origination: Footnote: Description: <jats:title>Abstract</jats:title><jats:p>In this article, we propose a wideband GaN HEMT power amplifier (PA) based on the dual‐fed distributed structure for 2.6 GHz WiMAX applications. For a continuous wave, the distributed PA shows the wideband performance compared with the conventional balanced PA. When the distributed PA is optimized by controlling the gate bias voltages, the wideband performance over 150 MHz is achieved for a WiMAX signal with a PAR of 9.47 dB and the signal bandwidth of 28 MHz. © 2008 Wiley Periodicals, Inc. Microwave Opt Technol Lett 51: 574–577, 2009; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.24090</jats:p>