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Medientyp: E-Artikel Titel: A wideband GaN HEMT power amplifier based on the dual‐fed distributed structure for WiMAX applications Beteiligte: Lee, Yong‐Sub; Lee, Mun‐Woo; Jeong, Yoon‐Ha Erschienen: Wiley, 2009 Erschienen in: Microwave and Optical Technology Letters Sprache: Englisch DOI: 10.1002/mop.24090 ISSN: 0895-2477; 1098-2760 Schlagwörter: Electrical and Electronic Engineering ; Condensed Matter Physics ; Atomic and Molecular Physics, and Optics ; Electronic, Optical and Magnetic Materials Entstehung: Anmerkungen: Beschreibung: <jats:title>Abstract</jats:title><jats:p>In this article, we propose a wideband GaN HEMT power amplifier (PA) based on the dual‐fed distributed structure for 2.6 GHz WiMAX applications. For a continuous wave, the distributed PA shows the wideband performance compared with the conventional balanced PA. When the distributed PA is optimized by controlling the gate bias voltages, the wideband performance over 150 MHz is achieved for a WiMAX signal with a PAR of 9.47 dB and the signal bandwidth of 28 MHz. © 2008 Wiley Periodicals, Inc. Microwave Opt Technol Lett 51: 574–577, 2009; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.24090</jats:p>