Hetero-emitter-like characteristics of phosphorus doped polysilicon emitter transistors. Part I: band structure in the polysilicon emitter obtained from electrical measurements
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Media type:
E-Article
Title:
Hetero-emitter-like characteristics of phosphorus doped polysilicon emitter transistors. Part I: band structure in the polysilicon emitter obtained from electrical measurements
Contributor:
Kondo, M.;
Kobayashi, T.;
Tamaki, Y.
imprint:
Institute of Electrical and Electronics Engineers (IEEE), 1995
Published in:
IEEE Transactions on Electron Devices, 42 (1995) 3, Seite 419-426