Media type: E-Article Title: Total Ionizing Dose Effects in 3D NAND Replacement Gate Flash Memory Cells Contributor: Bagatin, Marta; Gerardin, Simone; Paccagnella, Alessandro; Beltrami, Silvia imprint: Institute of Electrical and Electronics Engineers (IEEE), 2024 Published in: IEEE Transactions on Nuclear Science Language: Not determined DOI: 10.1109/tns.2023.3334949 ISSN: 1558-1578; 0018-9499 Keywords: Electrical and Electronic Engineering ; Nuclear Energy and Engineering ; Nuclear and High Energy Physics Origination: Footnote: