Media type: E-Article Title: Numerical Study of p-n-Doped Poly-Silicon Shield Gate Trench MOSFET With Reduced Output Capacitance Contributor: Wang, Wendi; Ning, Runtao; Shen, Z. John Published: Institute of Electrical and Electronics Engineers (IEEE), 2017 Published in: IEEE Electron Device Letters, 38 (2017) 8, Seite 1055-1058 Language: Not determined DOI: 10.1109/led.2017.2713354 ISSN: 1558-0563; 0741-3106 Origination: Footnote: