Published in:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 24 (2006) 6, Seite 2731-2736
Description:
Poly(o-methoxyaniline) based thin film organic transistors (OTFT’s) have been fabricated on a variety of dielectrics: SiO2, polyethylene, and polyvinylidene fluoride trifluoroethylene. Resulting inverted gate OTFT’s were found to be P channel with Au contacts. The mobility was measured to be around 10−3cm2V−1s−1 for as-deposited thin film OTFT structures but could be improved by an order of magnitude by doping, annealing, and decreasing the static dielectric constant of the gate dielectric.