• Medientyp: E-Artikel
  • Titel: Characterization and optimization of a P-channel poly(o-methoxyaniline) based thin film transistor
  • Beteiligte: Shrestha, Roshan P.; Yang, Dongxing; Li, Yuxiang; Yan, Li; Irene, Eugene A.
  • Erschienen: American Vacuum Society, 2006
  • Erschienen in: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 24 (2006) 6, Seite 2731-2736
  • Sprache: Englisch
  • DOI: 10.1116/1.2382946
  • ISSN: 1071-1023; 1520-8567
  • Schlagwörter: Electrical and Electronic Engineering ; Condensed Matter Physics
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  • Beschreibung: <jats:p>Poly(o-methoxyaniline) based thin film organic transistors (OTFT’s) have been fabricated on a variety of dielectrics: SiO2, polyethylene, and polyvinylidene fluoride trifluoroethylene. Resulting inverted gate OTFT’s were found to be P channel with Au contacts. The mobility was measured to be around 10−3cm2V−1s−1 for as-deposited thin film OTFT structures but could be improved by an order of magnitude by doping, annealing, and decreasing the static dielectric constant of the gate dielectric.</jats:p>