Description:
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The effects of sulfide treatment on Al-P<jats:sub>3</jats:sub>N<jats:sub>5</jats:sub>/InP metal-insulator-semiconductor (MIS) devices with a photochemical vapor deposit P<jats:sub>3</jats:sub>N<jats:sub>5</jats:sub> insulating film are investigated. The minimum density of interface trap states is as low as 2.6×10<jats:sup>10</jats:sup>/cm<jats:sup>2</jats:sup>·eV, and has been obtained from a sample sulfide-treated at 40° C for 20 min. We have successfully fabricated depletion-mode InP metal-insulator-semiconductor field-effect transistors (MISFETs) for microwave power device applications. The effective channel electron mobility is observed to be 3100 cm<jats:sup>2</jats:sup>/V·s at 300 K.
The extrinsic transconductance of 5.8 mS/mm shows a broad plateau region over a range of nearly 4 V gate voltage swing.
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