Beschreibung:
The effects of sulfide treatment on Al-P3N5/InP metal-insulator-semiconductor (MIS) devices with a photochemical vapor deposit P3N5 insulating film are investigated. The minimum density of interface trap states is as low as 2.6×1010/cm2·eV, and has been obtained from a sample sulfide-treated at 40° C for 20 min. We have successfully fabricated depletion-mode InP metal-insulator-semiconductor field-effect transistors (MISFETs) for microwave power device applications. The effective channel electron mobility is observed to be 3100 cm2/V·s at 300 K. The extrinsic transconductance of 5.8 mS/mm shows a broad plateau region over a range of nearly 4 V gate voltage swing.