Sell, Bernhard
[Author]
;
Krautschneider, Wolfgang
[Other];
Albrecht, Wolfgang
[Other]Technische Universität Hamburg-Harburg Arbeitsbereich Elektrotechnik V, Mikroelektronik
Interface characterization of metal-gate MOS-structures and the application to DRAM-capacitors
- [Elektronische Ressource]
University thesis:
Hamburg-Harburg, Techn. Univ., Arbeitsbereich Mikroelektronik, Diss., 2002
Footnote:
Unterschiede zwischen dem gedruckten Dokument und der elektronischen Ressource können nicht ausgeschlossen werden
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Description:
The main result of this study is the development of a full analysis procedure for metal-gate MOS-structures that allows to identify problems during processing and to extract physical parameters of metal electrodes. With knowledge gained from this analysis a polysilicon/TiN-stack has been developed and successfully integrated as low-resistance electrode into state-of-the-art deep trench DRAM-capacitors. These electrodes will be required to fabricate sub-100 nm deep trench DRAMs.