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Sell, Bernhard [Author] ; Krautschneider, Wolfgang [Other]; Albrecht, Wolfgang [Other] Technische Universität Hamburg-Harburg Arbeitsbereich Elektrotechnik V, Mikroelektronik

Interface characterization of metal-gate MOS-structures and the application to DRAM-capacitors

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Media type: Book; Thesis
Title: Interface characterization of metal-gate MOS-structures and the application to DRAM-capacitors
Contributor: Sell, Bernhard [Author]; Krautschneider, Wolfgang [Doktorvater]; Albrecht, Wolfgang [Gutachter]
Corporation: Technische Universität Hamburg-Harburg, Arbeitsbereich Elektrotechnik V, Mikroelektronik
imprint: 2002
Extent: IV, 115 S; Ill., graph. Darst
Language: English
RVK notation: ZN 4960 : MOS-, MIS-Schaltungen (hier auch CTD-Schaltungen; Eimerkettenschaltungen; CMOS-Schaltungen...)
Keywords: Dynamisches RAM > MOS
Dynamisches RAM > MOS
Origination:
University thesis: Hamburg-Harburg, Techn. Univ., Arbeitsbereich Mikroelektronik, Diss., 2002
Footnote: Zsfassung in dt. Sprache

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Sell, Bernhard: Interface characterization of metal-gate MOS-structures and the application to DRAM-capacitors (SLUB)

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Departmental Library DrePunct – stack

Shelf-mark: 2008 4 001173
Item ID: 31297494

Status: Loanable, place order

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