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Rinderknecht, Jochen [Author]

Phase formation and size effects in nanoscale silicide layers for the sub-100 nm microprocessor technology

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2005
Niewöhner, Ludwig [Author]

ITM-prozessierte CoSi 2 -Kontakte für großintegrierte CMOS-Schaltungen - [Als Ms. gedr.]

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Düsseldorf: VDI-Verl., 1991

Published in: Verein Deutscher Ingenieure: Fortschrittberichte VDI / 9 ; 122
Rinderknecht, Jochen [Author]

Phase formation and size effects in nanoscale silicide layers for the sub-100 nm microprocessor technology

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https://nbn-resolving.org/urn:nbn:de:swb:14-1126002535643-34479

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2005
Rinderknecht, Jochen [Author]

Phase formation and size effects in nanoscale silicide layers for the sub-100 nm microprocessor technology

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https://d-nb.info/976612445/34

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Imbert, Bruno [Author]

CMOS transistors process integration effects on Nickel-Platinum alloy silicide formation for 65 and 45 nm technology nodes. ; ETUDE DE LA FORMATION DU SILICIURE DE NICKEL-PLATINE INTEGRE DANS LA FABRICATION DE TRANSISTORS CMOS POUR LES TECHNOLOGIES 65 ET 45 NM

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https://tel.archives-ouvertes.fr/tel-00421859

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[Erscheinungsort nicht ermittelbar]: HAL CCSD, 2009
Kittl, J.A.; Opsomer, K.; Torregiani, C.; Demeurisse, C.; Mertens, S.; Brunco, D.P.; Van Dal, M.J.H.; Lauwers, A.

Silicides and germanides for nano-CMOS applications

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Elsevier BV, 2008

Published in: Materials Science and Engineering: B
Zollner, Stefan; Gregory, Richard B.; Kottke, M. L.; Vartanian, Victor; Wang, Xiang-Dong; Theodore, David; Fejes, P. L.; Conner, J. R.; Raymond, Mark; Zhu, Xiaoyan; Denning, Dean; Bolton, Scott; Chang, Kyuhwan; Noble, Ross; Jahanbani, Mohamad; Rossow, Marc; Goedeke, Darren; Filipiak, Stan; Garcia, Ricardo; Jawarani, Dharmesh; Taylor, Bill; Nguyen, Bich-Yen; Crabtree, P. E.; Thean, Aaron; [...]

Metrology Of Silicide Contacts For Future CMOS

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AIP, 2007

Published in: AIP Conference Proceedings
Wolansky, Dirk; Blaschke, Jean-Paul; Drews, Jürgen; Grabolla, Thomas; Heinemann, Bernd; Lenke, Thomas; Rücker, Holger; Schubert, Markus Andreas; Schulze, Sebastian; Stoll, Heinz-Peter; Zöllner, Marvin; Richter, Uwe; Deyo, Dan

(Invited) Nickel and Nickel-Platinum Silicide for BiCMOS Devices

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The Electrochemical Society, 2020

Published in: ECS Meeting Abstracts
Wolansky, Dirk; Grabolla, Thomas; Lenke, Thomas; Schulze, Sebastian; Zaumseil, Peter

Impact of nickel silicide on SiGe BiCMOS devices

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IOP Publishing, 2018

Published in: Semiconductor Science and Technology
Li, Suwen; Raju, Salahuddin; Zhou, Chang-Jian; Chan, Mansun

Carbon Nanotube Contact Plug on Silicide for CMOS Compatible Interconnect

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Institute of Electrical and Electronics Engineers (IEEE), 2016

Published in: IEEE Electron Device Letters
OH, S.-Y.

Thermally Robust Nickel Silicide Process for Nano-Scale CMOS Technology

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Institute of Electronics, Information and Communications Engineers (IEICE), 2005

Published in: IEICE Transactions on Electronics
Lauwers, Anne; Kittl, Jorge A.; Van Dal, Mark J.H.; Chamirian, Oxana; Pawlak, Malgorzata A.; de Potter, Muriel; Lindsay, Richard; Raymakers, Toon; Pages, Xavier; Mebarki, Bencherki; Mandrekar, Tushar; Maex, Karen

Ni based silicides for 45nm CMOS and beyond

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Elsevier BV, 2004

Published in: Materials Science and Engineering: B
Zhang, Shi-Li; Östling, Mikael

Metal Silicides in CMOS Technology: Past, Present, and Future Trends

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Informa UK Limited, 2003

Published in: Critical Reviews in Solid State and Materials Sciences
Chi, D. Z.; Mangelinck, D.; Zuruzi, A. S.; Wong, A. S. W.; Lahiri, S. K.

Nickel silicide as a contact material for submicron CMOS devices

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Springer Science and Business Media LLC, 2001

Published in: Journal of Electronic Materials
Liu, H.I.; Burns, J.A.; Keast, C.L.; Wyatt, P.W.

Thin silicide development for fully-depleted SOI CMOS technology

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Institute of Electrical and Electronics Engineers (IEEE), 1998

Published in: IEEE Transactions on Electron Devices
Wang, S.-J.; Misium, G.R.; Camp, J.C.; Chen, K.-L.; Tigelaar, H.L.

High-performance metal/silicide antifuse (for CMOS technology)

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Institute of Electrical and Electronics Engineers (IEEE), 1992

Published in: IEEE Electron Device Letters
Nygren, S.; Amm, D.T.; Levy, D.; Torres, J.; Goltz, G.; d'Ouville, T.T.; Delpech, P.

Dual-type CMOS gate electrodes by dopant diffusion from silicide

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Institute of Electrical and Electronics Engineers (IEEE), 1989

Published in: IEEE Transactions on Electron Devices
Stogdale, N.F.; Barlow, K.J.

Refractory metal silicides with applications to sub-micron CMOS processes

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Elsevier BV, 1989

Published in: Applied Surface Science
Maguire, P; Armstrong, B; Gamble, H; Wakefield, J

Platinum silicide shallow contacts for CMOS integrated circuits

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Elsevier BV, 1985

Published in: Physica B+C
Schwinge, Caroline; Hoffmann, Raik; Hertel, Johannes; Wislicenus, Marcus; Gerlich, Lukas; Völklein, Friedemann; Gerlach, Gerald; Wagner-Reetz, Maik

Thermoelectric transport properties of Si, SiGe, and silicide CMOS-compatible thin films

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AIP Publishing, 2023

Published in: Review of Scientific Instruments

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