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Huff, H.R [Other]; Gilmer, D.C [Other]

High Dielectric Constant Materials : VLSI MOSFET Applications

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Berlin, Heidelberg: Springer Berlin Heidelberg, 2005

Published in: Springer Series in Advanced Microelectronics ; 16- SpringerLink ; Bücher
Gilmer, D C; Rueckes, T; Cleveland, L

NRAM: a disruptive carbon-nanotube resistance-change memory

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IOP Publishing, 2018

Published in: Nanotechnology
Balatti, S.; Larentis, S.; Gilmer, D. C.; Ielmini, D.

Multiple Memory States in Resistive Switching Devices Through Controlled Size and Orientation of the Conductive Filament

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Wiley, 2013

Published in: Advanced Materials
Deora, S.; Bersuker, G.; Matthews, K.; Gilmer, D. C.; Kirsch, P. D.

AC Variability and Endurance Measurement Technique for Resistive Switching Memories

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Institute of Electrical and Electronics Engineers (IEEE), 2014

Published in: IEEE Transactions on Device and Materials Reliability
Kim, Hyeon-Seag; Gilmer, D. C.; Campbell, S. A.; Polla, D. L.

Leakage current and electrical breakdown in metal-organic chemical vapor deposited TiO2 dielectrics on silicon substrates

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AIP Publishing, 1996

Published in: Applied Physics Letters
Privitera, S.; Bersuker, G.; Butcher, B.; Kalantarian, A.; Lombardo, S.; Bongiorno, C.; Geer, R.; Gilmer, D.C.; Kirsch, P.D.

Microscopy study of the conductive filament in HfO2 resistive switching memory devices

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Elsevier BV, 2013

Published in: Microelectronic Engineering
Liang, Y.; Curless, J.; Tracy, C. J.; Gilmer, D. C.; Schaeffer, J. K.; Triyoso, D. H.; Tobin, P. J.

Interface dipole and effective work function of Re in Re∕HfO2∕SiOx∕n-Si gate stack

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AIP Publishing, 2006

Published in: Applied Physics Letters
Kim, Hyeon-Seag; Campbell, S. A.; Gilmer, D. C.; Kaushik, V.; Conner, J.; Prabhu, L.; Anderson, A.

Determination of effects of deposition and anneal properties for tetranitratotitanium deposited TiO2 dielectrics

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AIP Publishing, 1999

Published in: Journal of Applied Physics
Herner, S. B.; Gossmann, H.-J.; Baumann, F. H.; Gilmer, G. H.; Jacobson, D. C.; Jones, K. S.

Capture of vacancies by extrinsic dislocation loops in silicon

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AIP Publishing, 1998

Published in: Applied Physics Letters
Herner, S. B.; Gossmann, H.-J.; Pelaz, L. P.; Gilmer, G. H.; Jaraı́z, M.; Jacobson, D. C.; Eaglesham, D. J.

Ion mass influence on transient enhanced diffusion and boron clustering in silicon: Deviation from the “+1” model

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AIP Publishing, 1998

Published in: Journal of Applied Physics
Campbell, S.A.; Gilmer, D.C.; Xiao-Chuan Wang; Ming-Ta Hsieh; Hyeon-Seag Kim; Gladfelter, W.L.; Jinhua Yan

MOSFET transistors fabricated with high permitivity TiO/sub 2/ dielectrics

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Institute of Electrical and Electronics Engineers (IEEE), 1997

Published in: IEEE Transactions on Electron Devices
Bersuker, G.; Gilmer, D. C.; Veksler, D.; Kirsch, P.; Vandelli, L.; Padovani, A.; Larcher, L.; McKenna, K.; Shluger, A.; Iglesias, V.; Porti, M.; Nafría, M.

Metal oxide resistive memory switching mechanism based on conductive filament properties

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AIP Publishing, 2011

Published in: Journal of Applied Physics
Goel, N.; Gilmer, D.C.; Park, H.; Diaz, V.; Sun, Y.; Price, J.; Park, C.; Pianetta, P.; Kirsch, P.D.; Jammy, R.

Erase and Retention Improvements in Charge Trap Flash Through Engineered Charge Storage Layer

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Institute of Electrical and Electronics Engineers (IEEE), 2009

Published in: IEEE Electron Device Letters
Schaeffer, J.K.; Gilmer, D.C.; Capasso, C.; Kalpat, S.; Taylor, B.; Raymond, M.V.; Triyoso, D.; Hegde, R.; Samavedam, S.B.; White, B.E.

Application of group electronegativity concepts to the effective work functions of metal gate electrodes on high-κ gate oxides

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Elsevier BV, 2007

Published in: Microelectronic Engineering
Schaeffer, J. K.; Gilmer, D. C.; Samavedam, S.; Raymond, M.; Haggag, A.; Kalpat, S.; Steimle, B.; Capasso, C.; White, B. E.

On the positive channel threshold voltage of metal gate electrodes on high-permittivity gate dielectrics

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AIP Publishing, 2007

Published in: Journal of Applied Physics
Kukli, K.; Ritala, M.; Pore, V.; Leskelä, M.; Sajavaara, T.; Hegde, R. I.; Gilmer, D. C.; Tobin, P. J.; Jones, A. C.; Aspinall, H. C.

Atomic Layer Deposition and Properties of Lanthanum Oxide and Lanthanum‐Aluminum Oxide Films

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Wiley, 2006

Published in: Chemical Vapor Deposition
Kalpat, S.; Hsing-Huang Tseng; Ramon, M.; Moosa, M.; Tekleab, D.; Tobin, P.J.; Gilmer, D.C.; Hegde, R.I.; Capasso, C.; Tracy, C.; White, B.E.

BTI characteristics and mechanisms of metal gated HfO/sub 2/ films with enhanced interface/bulk process treatments

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Institute of Electrical and Electronics Engineers (IEEE), 2005

Published in: IEEE Transactions on Device and Materials Reliability
Liu, Chun-Li; Jiang, Z. X.; Hegde, R. I.; Sieloff, D. D.; Rai, R. S.; Gilmer, D. C.; Hobbs, C. C.; Tobin, P. J.; Lu, Shifeng

Theoretical and experimental investigation of boron diffusion in polycrystalline HfO2 films

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AIP Publishing, 2002

Published in: Applied Physics Letters
Gossmann, H.-J.; Haynes, T. E.; Stolk, P. A.; Jacobson, D. C.; Gilmer, G. H.; Poate, J. M.; Luftman, H. S.; Mogi, T. K.; Thompson, M. O.

The interstitial fraction of diffusivity of common dopants in Si

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AIP Publishing, 1997

Published in: Applied Physics Letters
Park, S. D.; Park, C.; Gilmer, D. C.; Park, H. K.; Kang, C. Y.; Lim, K. Y.; Burham, C.; Barnett, J.; Kirsch, P. D.; Tseng, H. H.; Jammy, R.; Yeom, G. Y.

Bulk and Interface effects on voltage linearity of ZrO2–SiO2 multilayered metal-insulator-metal capacitors for analog mixed-signal applications

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AIP Publishing, 2009

Published in: Applied Physics Letters

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